ABOUT US

Graphene Nanotech S. L. (GPNT) is a technology-based company that was established on March 2014 to investigate, produce and distribute high-quality epitaxial graphene grown on Silicon Carbide (SiC) substrates.

Our daily efforts are guided by the objective of establishing GPNT as a guarantee for the highest quality in the area of large-scale graphene for semiconductor devices, providing fully-characterized samples for both basic and applied research.

CNM
INA
ICMA

PRODUCTION TECHNIQUE

EPITAXIAL GRAPHENE GROWTH ON SILICON CARBIDE

STARTING MATERIAL

Silicon carbide (SiC) wafers

PREPARATION CONDITIONS

Strict environmental conditions of pressure, high temperature and inert gas fluxes

GRAPHITIZATION

Sublimation of silicon surface atoms

GRAPHENE

The detachment of Si atoms and subsequent reorganization of C atoms lead to the formation of epitaxial graphene.

LATEST NEWS

  • Miguel Villanueva 3, 1º, 1-2
    26001 Logroño

  • +34 941 249 125

  • info@gpnt.es

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