Our standard product consist of 8 x 8 mm2 -size pieces, cut from a semi-insulating, on-axis 4H-SiC wafer, with an epitaxial graphene layer grown on the silicon face of the silicon carbide substrate.
Contact us for inquiries about other sizes, graphene on C-face, off-axis substrates, samples with ion implantation, as well as products tailored to your needs.
We use very high temperature annealing processes in the appropriate gas environment and under the adequate conditions of pressure and temperature on Silicon Carbide substrates. The graphitization process takes part in SiC crystalline substrates through selective sublimation of Si surface atoms by high temperature annealing. Si desorbed atoms leave behind an epitaxial layer of graphene.